Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AIN buffer

Applied Physics Letters

Volumn 76, Issue 14, 2000, Pages 1860-1862

  Valcheva, E ^a   Paskova, T ^a   Tungasmita, S ^a   Persson, P O A ^a   Birch, J ^a   Svedberg, E B ^a   Hultman, L ^a   Monemar, B ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001432262     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126192     Document Type: Article

References (16)

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