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Volumn 243, Issue 1, 2002, Pages 94-102

Determination of crystal misorientation in epitaxial lateral overgrowth of GaN

(10) Chen, W M a McNally, P J a Jacobs, K b Tuomi, T c Danilewsky, A N d Zytkiewicz, Z R e Lowney, D a Kanatharana, J a Knuuttila, L c Riikonen, J c

a DUBLIN CITY UNIVERSITY (Ireland)

b GHENT UNIVERSITY (Belgium)

c AALTO UNIVERSITY (Finland)

d Polish Academy of Sciences ^*

e INSTITUTE OF PHYSICS (Poland)

Author keywords

A1. Wing tilt; A1. X ray rocking curve; A1. X ray topography; A3. Epitaxial lateral overgrowth; B1. Gallium nitride; B1. Sapphire

Indexed keywords

CRYSTAL ORIENTATION; ENERGY GAP; GALLIUM NITRIDE; MASKS; SAPPHIRE; SILICA; X RAY DIFFRACTION ANALYSIS;

X-RAY TOPOGRAPHY;

EPITAXIAL GROWTH;

EID: 0036078032 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)01484-7 Document Type: Article

Times cited : (21)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.