High resolution X-ray diffraction and X-ray topography study of GaN on sapphire

Materials Science and Engineering B

Volumn 64, Issue 2, 1999, Pages 99-106

  Chaudhuri, J ^a   Ng, M H ^a   Koleske, D D ^b   Wickenden, A E ^b   Henry, R L ^b  

^a Wichita State University   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Dislocation density; GaN on sapphire; High resolution X ray diffraction; Metalorganic vapor phase epitaxy; Stress in GaN films; X ray topography

Indexed keywords

CARRIER MOBILITY; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; STACKING FAULTS; STRESSES; THERMAL EXPANSION; X RAY CRYSTALLOGRAPHY; X RAY DIFFRACTION ANALYSIS;

DISLOCATION DENSITY; GALLIUM NITRIDE; THERMAL EXPANSION COEFFICIENT; X RAY TOPOGRAPHY;

THIN FILMS;

EID: 0002208885     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00165-8     Document Type: Article

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