Comparative analysis of synchrotron X-ray transmission and reflection topography techniques applied to Epitaxial Laterally Overgrown GaAs layers

Journal of X-Ray Science and Technology

Volumn 8, Issue 4, 1998, Pages 277-288

  Rantamaki R ^a   Tuomi, T ^a   Zytkiewicz, Z R ^b   McNally, P J ^c   Danilewsky, A N ^d  

^a AALTO UNIVERSITY   (Finland)

^b INSTITUTE OF PHYSICS   (Poland)

^c DUBLIN CITY UNIVERSITY   (Ireland)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; LIGHT REFLECTION; SEMICONDUCTING GALLIUM ARSENIDE; SYNCHROTRON RADIATION; X RAY ANALYSIS;

REFLECTION TOPOGRAPHY TECHNIQUES;

EPITAXIAL GROWTH;

EID: 0034438856     PISSN: 08953996     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Review

References (26)

1. J. Bak-Misiuk, J. Gronkowski, J. Härtwig and W. Wierzchowski, Phys. Stat. Sol. (A) 99 (1987), 345.
2. B. D. Cullity, Elements of X-ray Diffraction, Addison-Wesley, Reading, 1956, p. 90.
3. M. Dudley, S. Wang, W. Huang, C.H. Carter Jr., V.F. Tsvetkov and C. Fazi, J. Phys. D 28 (1995), A63.
4. X.R. Huang, M. Dudley, W.M. Vetter, W. Huang and S. Wang, Appl. Phys. Lett. 74 (1999), 353.
5. R. Köhler, B. Jenichen, E. Bauser and R. Bergmann, J. Appl. Phys. 72 (1992), 405.
6. R. Köhler, B. Jenichen, H. Raidt, E. Bauser and N. Nagel, J. Phys. D 28 (1995), A50.
7. A.R. Lang and M. Zhen-Hong, Proc. R. Soc. Lond. A 368 (1979), 313.
8. F. Minari and B. Billia, J. Phys. D, 1993, A73.
9. T. Nishinaga, T. Nakano and S. Zhang, J. Appl. Phys. 27 (1988), L964.
10. E. Prieur, T. Tuomi, J. Partanen, E. Yli-Juuti and M. Tilli, J. Crystal Growth 132 (1993), 599.
11. H. Raidt, R. Köhler, F. Banhart, B. Jenichen, A. Gutjahr, M. Konuma, I. Silier and E. Bauser, J. Appl. Phys. 80 (1996), 4101.
12. R. Rantamäki, T. Tuomi, P.J. McNally, J. Curley and A. Danilewsky, J. X-Ray Sci. Techn. 8 (1998), 159.
13. R. Rantamäki, T. Tuomi, Z.R. Zytkiewicz, D. Dobosz and P.J. McNally, J. Phys. D Appl. Phys. 32 (1999), A114.
14. R. Rantamäki, T. Tuomi, Z. R. Zytkiewicz, D. Dobosz, P.J. McNally, A.N. Danilewsky, Mat. Res. Soc. Sym. Proc. 570 (1999), 181.
15. R. Rantamäki, T. Tuomi, Z.R. Zytkiewicz, J. Domagala, P.J. McNally and A.N. Danilewsky, J. Appl. Phys. 86 (1999), 4298.
16. B.-Y. Tsaur, R. McClelland, J. Fan, R. Gale, J. Salerno, B. Vojak and C. Bozler, Appl. Phys. Lett. 41 (1982), 347.
17. T. Tuomi, K. Naukkarinen and P. Rabe, Phys. Stat. Sol. (A) 25 (1974), 93.
18. T. Uragami, J. Phys. Soc. Jap. 27 (1969), 147.
19. W. Wierzchowski, K. Wieteska and W. Graeff, Il Nuovo Cim. 19 (1997), 227.
20. K. Wieteska, W. Wierzchowski and W. Graeff, Il Nuovo Cim. 19 (1997), 233.
21. K. Wieteska, W. Wierzchowski and W. Graeff, J. Appl. Cryst. 30 (1997), 238.
22. S. Zhang and T. Nishinaga, J. Cryst. Growth 99 (1990), 192.
23. E. Zielińska-Rohozińska, Phys. Stat. Sol. (A) 59 (1980), 317.
24. Z. R. Zytkiewicz, Cryst. Res. Technol. 34 (1999), 573.
25. Z.R. Zytkiewicz, J. Domagala, D. Dobosz and J. Bak-Misiuk, J. Appl. Phys. 84 (1998), 6937.
26. Z.R. Zytkiewicz, J. Domagala, D. Dobosz and J. Bak-Misiuk, J. Appl. Phys. 86 (1999), 1965.