Dependence of growth conditions on morphology in lateral epitaxial overgrowth of GaN by sublimation method

Journal of Crystal Growth

Volumn 207, Issue 3, 1999, Pages 174-178

  Qhalid Fareed, R S ^a   Tottori, S ^a   Inaoka, T ^a   Nishino, K ^a   Sakai, S ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; FILM GROWTH; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBLIMATION; SURFACE ROUGHNESS; THERMAL EFFECTS;

GALLIUM NITRIDE; LATERAL EPITAXIAL OVERGROWTH (LEO);

SEMICONDUCTING FILMS;

EID: 0001225864     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00373-5     Document Type: Article

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