Growth and in situ monitoring of GaN using IR interference effects

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 192-198

  Considine, L ^a   Thrush, E J ^a   Crawley, J A ^a   Jacobs, K ^b   Van Der Stricht, W ^b   Moerman, I ^b   Demeester, P ^b   Park, G H ^c   Hwang, S J ^c   Song, J J ^c  

^a THOMAS SWAN AND CO LTD   (United Kingdom)

^b GHENT UNIVERSITY   (Belgium)

^c OKLAHOMA STATE UNIVERSITY   (United States)

Author keywords

Close spaced vertical reactor; GaN; Interferometry; MOVPE

Indexed keywords

INFRARED RADIATION; INTERFEROMETRY; LIGHT INTERFERENCE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR GROWTH;

CLOSE-SPACED VERTICAL REACTORS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032477170     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00567-3     Document Type: Article

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