Synchrotron X-ray topography analysis of GaAs layers grown on GaAs substrates by liquid phase epitaxial lateral overgrowth

Journal of Physics D: Applied Physics

Volumn 32, Issue 10 A, 1999, Pages

  Rantamaki R ^a   Tuomi, T ^a   Zytkiewicz, Z R ^b   Dobosz, D ^b   McNally, P J ^c  

^a AALTO UNIVERSITY   (Finland)

^b INSTITUTE OF PHYSICS   (Poland)

^c DUBLIN CITY UNIVERSITY   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; LIQUID PHASE EPITAXY; PHOTOLITHOGRAPHY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; SURFACE TOPOGRAPHY; SYNCHROTRON RADIATION;

BACK REFLECTION TOPOGRAPHS; EPITAXIAL LATERAL OVERGROWTH; LIQUID ENCAPSULATED CZOCHRALSKI; SYNCHROTRON X RAY TOPOGRAPHY;

X RAY DIFFRACTION ANALYSIS;

EID: 0038509843     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/10A/324     Document Type: Article

References (11)

1. Tsaur B-Y, McClelland R, Fan J, Gale R, Salerno J, Vojak B and Bozler C 1982 Appl. Phys. Lett. 41 347
2. Nakamura S et al 1997 Japan. J. Appl. Phys. 36 L1568
3. Tuomi T, Naukkarinen K and Rabe P 1974 Phys. Status Solidi a 25 93
4. Zytkiewicz Z R and Dobosz D 1998 Heterostructure Epitaxy and Devices ed P Kordos and J Novak (Dordrecht: Kluwer) p 71
5. Tuomi T, Tilli M and Anttila O 1985 J. Appl. Phys. 57 1384
6. Blech I A and Meieran E S 1967 J. Appl. Phys. 38 2913
7. Prieur E, Tuomi T, Partanen J, Yli-Juuti E and Tilli M 1993 J. Crystal Growth 132 599
8. Zytkiewicz Z R Cryst. Res. Technol. 34 573
9. Raidt H, Köhler R, Banhart F, Jenichen B, Gutjahr A, Konuma M, Silier I and Bauser E 1996 J. Appl. Phys. 80 4101
10. Zytkiewicz Z R, Domagala J, Dobosz D and Bak-Misiuk J 1998 J. Appl. Phys. 84 6937
11. Zytkiewicz Z R 1998 Acta Phys. Polon. A 94 219