Nature and elimination of yellow-band luminescence and donor-acceptor emission of undoped GaN

Applied Physics Letters

Volumn 74, Issue 19, 1999, Pages 2821-2823

  Li, G ^a   Chua, S J ^a   Xu, S J ^a   Wang, W ^a   Li, P ^b   Beaumont, B ^c   Gibart, P ^c  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c Cent de Recherche sur   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; NITRIDES; PHOTOLUMINESCENCE; POINT DEFECTS; SAPPHIRE; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032607794     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124025     Document Type: Article

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