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Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 307-316

p-type doping of SiC by high dose Al implantation - Problems and progress

(3) Heera, V a Panknin, D a Skorupa, W a

a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

Author keywords

Al implantation; Annealing; P Type doping; Resistivity; SiC

Indexed keywords

ALUMINUM; ANNEALING; ELECTRIC CONDUCTIVITY; ION IMPLANTATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES;

ELECTRICAL ACTIVATION;

SILICON CARBIDE;

EID: 0035852234 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)00510-4 Document Type: Article

Times cited : (101)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.