Preservation of polytypic structure in implanted 4H-SiC(1 1 0 0)

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 567-572

  Satoh, M ^a   Okamoto, K ^a   Nakaike, Y ^a   Kuriyama, K ^a   Kanaya, M ^b   Ohtani, N ^b  

^a HOSEI UNIVERSITY   (Japan)

^b NIPPON STEEL CORPORATION   (Japan)

Author keywords

(1 1 0 0) face; Ion implantation; Polytypic structure; SiC

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTALLIZATION; GALLIUM; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR GROWTH; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; ION CHANNELING; POLYTYPIC STRUCTURE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033513817     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00888-X     Document Type: Article

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