Doping in cubic silicon-carbide

Applied Physics Letters

Volumn 75, Issue 1, 1999, Pages 88-90

  Gubanov, V A ^a   Fong, C Y ^b  

^a SAN JOSE STATE UNIVERSITY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BINDING ENERGY; BORON; CARRIER MOBILITY; CRYSTAL IMPURITIES; FERMI LEVEL; NITROGEN; SEMICONDUCTOR DOPING; SILICON CARBIDE;

EXCHANGE-CORRELATION FUNCTIONS; LINEAR MUFFIN-TIN ORBITALS ATOMIC SPHERE APPROXIMATION METHOD; LOCAL DENSITY APPROXIMATION (LDA);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032607110     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124285     Document Type: Article

References (9)

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