Phase formation due to high dose aluminum implantation into silicon carbide

Journal of Applied Physics

Volumn 87, Issue 1, 2000, Pages 78-85

  Heera, V ^a   Reuther, H ^a   Stoemenos, J ^b   Pecz B ^c  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002810345     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371829     Document Type: Article

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