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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 347-349

Defect characterization in high temperature implanted 6H-SiC using TEM

(5) Suvorov, A V a,b Lebedev, O I c,d Suvorova, A A b Van Landuyt, J c Usov, I O b

a Arkansas Power Electronics International Inc (United States)

b IOFFE INSTITUTE (Russian Federation)

c UNIVERSITY OF ANTWERP (Belgium)

d SHUBNIKOV INSTITUTE OF CRYSTALLOGRAPHY (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); ION IMPLANTATION; MICROSTRUCTURE; PRECIPITATION (CHEMICAL); STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

STACKING SEQUENCE;

SILICON CARBIDE;

EID: 0031547703 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(96)00954-8 Document Type: Article

Times cited : (19)

References (11)

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