Al, Al/C and Al/Si implantations in 6H-SiC

Journal of Electronic Materials

Volumn 25, Issue 1, 1996, Pages 75-80

  Rao, Mulpuri V ^a   Griffiths, Peter ^a   Gardner, Jason ^a   Holland, O W ^b   Ghezzo, M ^c   Kretchmer, J ^c   Kelner, G ^d   Freitas Jr , J A ^d,e  

^a George Mason University   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c GE GLOBAL RESEARCH   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

^e SFA INC   (United States)

Author keywords

Al; Annealing; Implantation; SiC

Indexed keywords

ANNEALING; CARBON; ION IMPLANTATION; SILICON; SILICON CARBIDE; THIN FILMS;

ACCEPTOR ACTIVATION; COIMPLANTATION; MULTIPLE ENERGY IMPLANTATIONS; NET HOLE CONCENTRATION;

ALUMINUM;

EID: 0029679212     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666177     Document Type: Article

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