A comparative study of C plus Al coimplantation and Al implantation in 4H- and 6H-SiC

IEEE Transactions on Electron Devices

Volumn 46, Issue 3, 1999, Pages 612-619

  Tone, Kiyoshi ^a,b   Zhao, Jian H ^a,c  

^a IEEE   (United States)

^b Department of Electrical and Computer Engineering ^*  (United States)

^c RUTGERS UNIVERSITY   (United States)

Author keywords

Al; C; Hall effect; Ohmic contact; Semiconductor device doping; Semiconductor device ion implantation; Semiconductor diodes; Semiconductor materials measurements; SiC

Indexed keywords

ACTIVATION ANALYSIS; ALUMINUM; AMORPHIZATION; CARBON; CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRIC CONDUCTIVITY OF SOLIDS; HALL EFFECT; ION IMPLANTATION; LEAKAGE CURRENTS; OHMIC CONTACTS; SILICON CARBIDE;

COIMPLANTATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033097515     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.748886     Document Type: Article

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