Charge transport in silicon carbide: Atomic and microscopic effects

Journal of Applied Physics

Volumn 80, Issue 4, 1996, Pages 2260-2268

  Schroeder, A ^a   Pelster, R ^a   Grunow, V ^a   Lennartz, W ^a   Nimtz, G ^a   Friederich, K ^b  

^a UNIVERSITY OF COLOGNE   (Germany)

^b CERASIV GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3042925299     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363054     Document Type: Article

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