Damage accumulation and annealing in 6H-SiC irradiated with Si+

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 143, Issue 3, 1998, Pages 333-341

  Jiang, W ^a   Weber, W J ^a   Thevuthasan, S ^a   McCready, D E ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; CRYSTAL LATTICES; INTERFACES (MATERIALS); ION BOMBARDMENT; ION IMPLANTATION; POINT DEFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SILICON CARBIDE; SINGLE CRYSTALS; THERMAL EFFECTS;

ISOCHRONAL ANNEALING;

RADIATION DAMAGE;

EID: 0032167216     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00381-4     Document Type: Article

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