High dose implantation in 6H-SiC

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 579-582

  Heera, V ^a   Skorupa, W ^a   Stoemenos, J ^b   Pecz B ^c  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CARBON; CRYSTAL LATTICES; CRYSTALLINE MATERIALS; ION BEAMS; ION IMPLANTATION; PHASE TRANSITIONS; PRECIPITATION (CHEMICAL); SEMICONDUCTING DIAMONDS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLINE PHASE; HIGH DOSE IMPLANTATION; ION BEAM SYNTHESIS;

SILICON CARBIDE;

EID: 14344267795     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.579     Document Type: Article

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