Annealing and recrystallization of amorphous silicon carbide produced by ion implantation

Journal of Applied Physics

Volumn 84, Issue 9, 1998, Pages 4769-4774

  Hofgen A ^a   Heera, V ^a   Eichhorn, F ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041924276     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368801     Document Type: Article

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