Ion implantation and annealing effects in silicon carbide

Materials Research Society Symposium - Proceedings

Volumn 438, Issue , 1996, Pages 241-252

  Heera, V ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; CRYSTALLIZATION; ION IMPLANTATION; RADIATION DAMAGE; SEMICONDUCTOR DOPING; SILICON CARBIDE;

HIGH TEMPERATURE IMPLANTATION; ION BEAM INDUCED CRYSTALLIZATION; ION RANGE; SURFACE EROSION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030352112     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-438-241     Document Type: Conference Paper

References (91)