Recent progress in SiC epitaxial growth and device processing technology

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 543-548

  Kimoto, T ^a   Yano, H ^a   Tamura, S ^a   Miyamoto, N ^a   Fujihira, K ^a   Negoro, Y ^a   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRONIC DENSITY OF STATES; EPITAXIAL GROWTH; ION IMPLANTATION; MOSFET DEVICES; SEMICONDUCTOR DOPING; X RAY DIFFRACTION ANALYSIS;

COLD WALL CHEMICAL VAPOR DEPOSITION; DEVICE PROCESSING TECHNOLOGY;

SILICON CARBIDE;

EID: 17944401614     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.543     Document Type: Article

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