Damage production and annealing of ion implanted silicon carbide

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 113, Issue 1-4, 1996, Pages 239-243

  Heft, A ^a   Wendler, E ^a   Heindl, J ^b   Bachmann, T ^a   Glaser, E ^a   Strunk, H P ^b   Wesch, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; AMORPHOUS MATERIALS; ANNEALING; ATOMS; CRYSTAL GROWTH; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; OPTICAL VARIABLES MEASUREMENT; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

ANTIMONY IONS; DAMAGE PRODUCTION; DOSE RANGE; GALLIUM IONS; HIGH DOSE IMPLANTATION; ION IMPLANTED SILICON CARBIDE;

SILICON CARBIDE;

EID: 0030166825     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01304-0     Document Type: Article

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