Precipitate formation in heavily Al-doped 4H-SiC layers

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 583-586

  Linnarsson, M K ^a   Persson, P O A ^b   Bleichner, H ^c   Janson, M S ^a   Zimmermann, U ^a   Andersson, H ^a   Karlsson, S ^d   Yakimova, R ^b   Hultman, L ^b   Svensson, B G ^a,e  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

^c ABB CORPORATE RESEARCH   (Sweden)

^d ACREO AB   (Sweden)

^e UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CRYSTAL STRUCTURE; DOPING (ADDITIVES); EPITAXIAL GROWTH; PHASE COMPOSITION; PRECIPITATION (CHEMICAL); SECONDARY ION MASS SPECTROMETRY; SOLUBILITY; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLINITY; ENERGY FILTERED TRANSMISSION ELECTRON MICROSCOPY; PRECIPITATE; SOLUBILITY LIMIT;

SILICON CARBIDE;

EID: 4243275411     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.583     Document Type: Article

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