SrBi2Ta2O9 memory capacitor on Si with a silicon nitride buffer

Applied Physics Letters

Volumn 72, Issue 10, 1998, Pages 1185-1186

  Han, Jin Ping ^a   Ma, T P ^a  

^a Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000889915     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121008     Document Type: Article

References (7)

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4. For the latest references, please see the related articles in Integr. Ferroelectr. 17&18, 1 (1997).
5. M. Khare, X. Guo, X. W. Wang, T. P. Ma, G. J. Cui, T. Tamagawa, B. L. Halpern, and J. J. Schmitt, 1997 Symposium on VLSI Technology Digest of Technical Papers, p. 51.
6. T. P. Ma, IEEE Trans. Electron Dev. (to be published).
7. D. M. Fleetwood, IEEE Trans. Nucl. Sci. 39, 269 (1992).