Ultra-thin gate oxides and ultra-shallow junctions for high performance, sub-100 nm pMOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 1041-1043

  Timp, G ^a   Agarwal, A ^a   Bourdelle, K K ^a   Bower, J E ^a   Boone, T ^a   Ghetti, A ^a   Green, M ^a   Garno, J ^a   Gossmann, H ^a   Jacobson, D ^a   Kleiman, R ^a   Kornblit, A ^a   Klemens, F ^a   Moccio, S ^a   O'Malley, M L ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; DIFFUSION IN SOLIDS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); ION IMPLANTATION; OXIDATION; QUANTUM THEORY; REACTIVE ION ETCHING; SEMICONDUCTING BORON; SEMICONDUCTOR JUNCTIONS;

SCANNING CAPACITANCE MICROGRAPHS (SCM); SPREADING RESISTANCE PROFILING (SRP); ULTRASHALLOW JUNCTIONS; ULTRATHIN GATE OXIDES;

MOSFET DEVICES;

EID: 17444438825     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)