Preparation of PbTiO3 thin films by plasma enhanced MOCVD and the effect of rapid thermal annealing

Journal of Electronic Materials

Volumn 26, Issue 12, 1997, Pages 1394-1400

  Hahn, Yoon Bong ^a   Kim, Jong Wha ^a   Youn, Chang Joo ^a   Lee, In Sun ^b  

^a Chonbuk National University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Crystallinity; Deposition rate; Electrical properties; PbTiO3; Plasma enhanced metalorganic chemical vapor deposition (PEMOCVD); Rapid thermal annealing (RTA)

Indexed keywords

ANNEALING; CRYSTALLIZATION; CURRENT DENSITY; DIELECTRIC FILMS; DISSOCIATION; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDES; OXYGEN; PERMITTIVITY; SURFACE ROUGHNESS;

CRYSTALLINITY; PLASMA ENHANCED METALORGANIC CHEMICAL VAPOR DEPOSITION; VOLATILIZATION;

FILM PREPARATION;

EID: 0031386156     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0057-0     Document Type: Article

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