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Volumn 66, Issue 3-5, 2001, Pages 53-153

Atomic-scale homoepitaxial growth simulations of reconstructed III-V surfaces

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEPOSITION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; OPTOELECTRONIC DEVICES; REACTION KINETICS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035252691     PISSN: 00796816     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0079-6816(00)00023-X     Document Type: Review
Times cited : (51)

References (205)
  • 14
    • 0043279542 scopus 로고
    • Molecular beam epitaxy - Fundamentals and current status
    • Springer, Berlin
    • M.A. Herman, H. Sitter, Molecular beam epitaxy - fundamentals and current status, Springer Materials Science, vol. 7, Springer, Berlin, 1989.
    • (1989) Springer Materials Science , vol.7
    • Herman, M.A.1    Sitter, H.2
  • 15
    • 0003583926 scopus 로고
    • A.Y. Cho. New York: AIP Press
    • Cho A.Y. Molecular Beam Epitaxy. 1994;AIP Press, New York.
    • (1994) Molecular Beam Epitaxy
  • 74
    • 0032119472 scopus 로고    scopus 로고
    • private communication. See also, M. Murayama, K. Shiraishi, T. Nakayama
    • T. Nakayama, private communication. See also, M. Murayama, K. Shiraishi, T. Nakayama, Jpn. J. Appl. Phys. 37 (1998) 4109.
    • (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 4109
    • Nakayama, T.1
  • 194
    • 85031522841 scopus 로고    scopus 로고
    • private communication
    • P. Kratzer, private communication.
    • Kratzer, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.