First principles study of arsenic incorporation on a GaAs(001) surface during MBE growth

Surface Science

Volumn 357-358, Issue , 1996, Pages 451-454

  Shiraishi, Kenji ^a   Ito, Tomonori ^b  

^a NTT Basic Research Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Adatoms; Computer simulations; Density functional calculations; Epitaxy; Gallium arsenide; Growth; Semiconducting surfaces; Surface relaxation and reconstruction

Indexed keywords

ADSORPTION; ARSENIC; CALCULATIONS; COMPUTER SIMULATION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PROBABILITY DENSITY FUNCTION; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE STRUCTURE; SURFACE TREATMENT;

ADSORPTION ENERGY; ARSENIC ATOM INCORPORATION; DENSITY FUNCTIONAL CALCULATIONS; SEMICONDUCTING SURFACES; STRUCTURAL CHANGE; SURFACE RELAXATION;

SURFACE PHENOMENA;

EID: 2442471605     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00198-7     Document Type: Article

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