Sb-induced GaAs(111)B surface reconstructions: Success and failure of the electron-counting rule

Surface Science

Volumn 365, Issue 3, 1996, Pages

  Moriarty, P ^a   Beton, P H ^a   Henini, M ^a   Woolf, D A ^b  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

Antimony; Gallium arsenide; Metal semiconductor interfaces; Scanning tunneling microscopy; Surface relaxation and reconstruction

Indexed keywords

ANNEALING; ANTIMONY; CHEMICAL BONDS; DEPOSITION; ELECTRONS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE;

DANGLING BONDS; ELECTRON COUNTING RULE; SURFACE RECONSTRUCTION; SURFACE RELAXATION;

SURFACE STRUCTURE;

EID: 0030269649     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00884-9     Document Type: Article

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