메뉴 건너뛰기




Volumn 59, Issue 23, 1999, Pages 15246-15252

Model for nucleation in gaas homoepitaxy derived from first principles

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001313907     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.15246     Document Type: Article
Times cited : (40)

References (20)
  • 10
    • 85037898398 scopus 로고    scopus 로고
    • Estimate based on the hopping rate along the (Formula presented) direction at 800 K [Eq. (5) in Ref. 9
    • Estimate based on the hopping rate along the (Formula presented) direction at 800 K [Eq. (5) in Ref. 9].
  • 17
    • 0344979249 scopus 로고
    • CRC, Boca Raton 67th ed. R. C. West
    • Handbook of Chemistry and Physics, edited by R. C. West, 67th ed. (CRC, Boca Raton, 1986).
    • (1986) Handbook of Chemistry and Physics
  • 19
    • 85037878034 scopus 로고    scopus 로고
    • D. Bimberg et al., in Numerical Data and Functional Relationships in Science and Technology, edited by K.-H. Hellwege, Landolt-Börnstein, New Series, Group 17, Vol. III, Pts. a, b (Springer-Verlag, Berlin, 1982), p. 642.
    • D. Bimberg et al., in Numerical Data and Functional Relationships in Science and Technology, edited by K.-H. Hellwege, Landolt-Börnstein, New Series, Group 17, Vol. III, Pts. a, b (Springer-Verlag, Berlin, 1982), p. 642.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.