Kinetics of homoepitaxial growth on GaAs(100) studied by two-component Monte Carlo simulation

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 403-408

  Ishii, A ^a   Kawamura, T ^a  

^a TOTTORI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; MONTE CARLO METHODS; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH;

ANISOTROPIC BARRIER ENERGIES; HOMOEPITAXIAL GROWTH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032098639     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00091-9     Document Type: Article

References (10)

1. A. Madhukar Thin Solid Films 231 1993 8
2. B. Voigtläander T. Weber P. Šmilauer D.E. Wolf Phys. Rev. Lett. 78 1997 2164
3. J.S. Sudijono M.D. Johnson C.W. Snyder M.B. Elowitz B. Orr Phys. Rev. Lett. 69 1992 2811
4. T. Shitara, D.D. Vvedensky, M.R. Wilby, J. Zhang, J.H. Neave, B.A. Joyce, Phys. Rev. B, 46 (1992) 6815, 6825.
5. P. Šmilauer D.D. Vvedensky Phys. Rev. B 48 1993 17603
6. T. Ito K. Shiraishi Surf. Sci. 357/358 1996 486
7. P.A. Maksym Semicond. Sci. Technol. 3 1988 549
8. K. Ohta T. Kojima T. Nakagawa J. Cryst. Growth 95 1989 71
9. M.R. Wilby S. Clarke T. Kawamura D.D. Vvedensky Phys. Rev. B 40 1989 10617
10. A. Ishii, T. Kawamura, to be submitted.