The GaAs(001)-(2 × 4) surface: Structure, chemistry, and adsorbates

Journal of Physical Chemistry B

Volumn 101, Issue 9, 1997, Pages 1498-1509

  Goringe, C M ^a   Clark, L J ^b   Lee, M H ^c,e   Payne, M C ^c   Stich, I ^c,f   White, J A ^c   Gillan, M J ^d   Sutton, A P ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF EDINBURGH   (United Kingdom)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d KEELE UNIVERSITY   (United Kingdom)

^e SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^f JRCAT   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BONDING; CALCULATIONS; CHEMISORPTION; CHEMISTRY; COMPUTATIONAL METHODS; COMPUTER SIMULATION; DECOMPOSITION; ELECTRON ENERGY LEVELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE STRUCTURE;

DIMERS; TRIMETHYLGALLIUM ADSORBATES;

SURFACES;

EID: 0031075320     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp962853c     Document Type: Review

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