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Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1102-1107

The building up of terrace periodicity by MBE growth on (0 0 1) GaAs vicinal surfaces

(5) Lelarge, F a Wang, Z Z a Cavanna, A a Laruelle, F a Etienne, B a

a CNRS (France)

Author keywords

Atomic force microscopy; Molecular beam epitaxy; Monte Carlo simulation; Vicinal surfaces

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SURFACE STRUCTURE;

ALUMINUM ARSENIDE; ANISOTROPIC SCHWOEBEL BARRIER; TERRACE PERIODICITY; VICINAL SURFACES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031141225 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00910-4 Document Type: Article

Times cited : (5)

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