메뉴 건너뛰기




Volumn 370, Issue 1, 1997, Pages

Direct evidence for the step density model in the initial stages of the layer-by-layer homoepitaxial growth of GaAs(111)A

Author keywords

Adatoms; Adsorption kinetics; Chemisorption; Epitaxy; Gallium arsenide; Growth; Low index single crystal surfaces; Models of surface kinetics; Molecular beam epitaxy; RHEED; Scanning tunneling microscopy; Semiconductor semiconductor thin film structures

Indexed keywords

ADSORPTION; CHEMISORPTION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MONOLAYERS; MORPHOLOGY; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; SURFACE PROPERTIES;

EID: 0030834675     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01173-9     Document Type: Article
Times cited : (40)

References (22)
  • 1
    • 0004281127 scopus 로고
    • Eds. S. Mahajan and T.S. Moss Elsevier, Amsterdam, and references therein
    • See for example, B.A. Joyce, D.D. Vvedensky and C.T. Foxon, in: Handbook on Semiconductors, Vol. 3, Eds. S. Mahajan and T.S. Moss (Elsevier, Amsterdam, 1994), and references therein.
    • (1994) Handbook on Semiconductors , vol.3
    • Joyce, B.A.1    Vvedensky, D.D.2    Foxon, C.T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.