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Volumn 370, Issue 1, 1997, Pages
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Direct evidence for the step density model in the initial stages of the layer-by-layer homoepitaxial growth of GaAs(111)A
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Author keywords
Adatoms; Adsorption kinetics; Chemisorption; Epitaxy; Gallium arsenide; Growth; Low index single crystal surfaces; Models of surface kinetics; Molecular beam epitaxy; RHEED; Scanning tunneling microscopy; Semiconductor semiconductor thin film structures
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Indexed keywords
ADSORPTION;
CHEMISORPTION;
EPITAXIAL GROWTH;
MOLECULAR BEAM EPITAXY;
MONOLAYERS;
MORPHOLOGY;
REACTION KINETICS;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SCANNING TUNNELING MICROSCOPY;
SINGLE CRYSTALS;
SURFACE PROPERTIES;
ADATOMS;
HOMOEPITAXY;
LOW INDEX SINGLE CRYSTAL SURFACES;
SEMICONDUCTOR SEMICONDUCTOR THIN FILM STRUCTURES;
SPECULAR BEAM INTENSITY OSCILLATIONS;
SURFACE STEP DENSITY;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0030834675
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(96)01173-9 Document Type: Article |
Times cited : (40)
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References (22)
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