Monte Carlo simulation of homoepitaxial growth on two-component compound semiconductor surfaces

Surface Science

Volumn 436, Issue 1, 1999, Pages 38-50

  Ishii, A ^a   Kawamura, T ^b  

^a TOTTORI UNIVERSITY   (Japan)

^b UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; CRYSTAL STRUCTURE; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; MORPHOLOGY; REACTION KINETICS; SURFACE STRUCTURE;

ANISOTROPIC HOPPING BARRIER ENERGY; TWO COMPONENT SEMICONDUCTOR SURFACES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033359745     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00608-1     Document Type: Article

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