Reflectance difference spectra calculations of GaAs(001) As- and Ga-rich reconstruction surface structures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 7, 1998, Pages 4109-4114

  Murayama, Misao ^a   Shiraishi, Kenji ^b   Nakayama, Takashi ^a  

^a CHIBA UNIVERSITY   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

(001); Anisotropy; As rich surfaces; Dimer; Ga rich surfaces; GaAs; Lone pair; RDS; Sp3s*; Surface; Tight binding

Indexed keywords

ANISOTROPY; CALCULATIONS; SPECTRUM ANALYSIS; SURFACES;

DIMER; LONE PAIR;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032119472     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4109     Document Type: Article

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27. It is an interesting fact that the practical magnitude of Vppa is same for As and Ga dimers, because the length of As dimer obtained by our ab initio calculation is longer than the length of Ga dimer as seen in Table II.
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