A Monte Carlo simulation study on the structural change of the GaAs(001) surface during MBE growth

Surface Science

Volumn 357-358, Issue , 1996, Pages 486-489

  Ito, Tomonori ^a   Shiraishi, Kenji ^b  

^a NTT CORPORATION   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Adsorption kinetics; Computer simulations; Epitaxy; Gallium arsenide; Low index single crystal surfaces; Surface structure, morphology, roughness, and topography

Indexed keywords

ADSORPTION; CALCULATIONS; COMPUTER SIMULATION; CRYSTAL LATTICES; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; MORPHOLOGY; REACTION KINETICS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS; SURFACES;

ADATOMS; DIMER; ELECTRON COUNTING MONTE CARLO SIMULATION; LOW INDEX SINGLE CRYSTAL SURFACES; SURFACE TOPOGRAPHY;

SURFACE STRUCTURE;

EID: 0030172032     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00207-5     Document Type: Article

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