Does scanning tunnelling microscopy provide a realistic picture of the step array of vicinal GaAs(0 0 1) surfaces grown at high temperature?

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1309-1315

  Daweritz L ^a   Norenberg H ^b   Schutzendube P ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

Kinetics of growth; Molecular beam epitaxy; Morphological stability of GaAs(0 0 1)

Indexed keywords

DIFFUSION IN SOLIDS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; QUENCHING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; SURFACE TREATMENT; THERMAL EFFECTS;

MORPHOLOGICAL STABILITY; SURFACE MISORIENTATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031144258     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01040-8     Document Type: Article

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