A scanning tunneling microscopy-reflection high energy electron diffraction-rate equation study of the molecular beam epitaxial growth of InAs on GaAs(001), (110) and (111)A - Quantum dots and two-dimensional modes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 SUPPL. B, 1997, Pages 4111-4117

  Joyce, B A ^a   Sudijono, J L ^a,c   Belk, J G ^a   Yamaguchi, H ^a,d   Zhang, X M ^a   Dobbs, H T ^a   Zangwill, A ^b   Vvedensky, D D ^a   Jones, T S ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c 60 Woodlands Industrial Park D ^*  (Singapore)

^d NTT Basic Research Laboratories   (Japan)

Author keywords

Growth modes; Quantum dots; Rate equations; RHEED; STM

Indexed keywords

EID: 0000620466     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.4111     Document Type: Article

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