Density-functional theory studies on microscopic processes of GaAs growth

Progress in Surface Science

Volumn 59, Issue 1-4, 1998, Pages 135-147

  Kratzer, Peter ^a   Morgan, Caroline G ^a,b   Scheffler, Matthias ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^b WAYNE STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; DIMERS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; SURFACE STRUCTURE;

DENSITY FUNCTIONAL THEORY (DFT);

SEMICONDUCTOR GROWTH;

EID: 0032157080     PISSN: 00796816     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0079-6816(98)00041-0     Document Type: Article

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