Theoretical investigations of adsorption behavior on GaAs(001) surfaces

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 8, 1998, Pages 4234-4243

  Ito, Tomonori ^b   Shiraishi, Kenji ^a  

^a Bio Medical Informatics Research Center   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Adsorption behavior; Dimer kink; Electron counting model; Empirical interatomic potential; Ga adatoms; GaAs(001) surfaces; MBE growth; Migration potential; Monte Carlo simulation; Step

Indexed keywords

MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN;

ADATOMS; MIGRATION POTENTIALS;

ADSORPTION;

EID: 0032131137     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4234     Document Type: Article

References (63)

1. P. K. Larsen, J. F. van der Veen, A. Mzur, J. Pollmann, J. H. Neave and B. A. Joyce: Phys. Rev. B 26 (1982) 3222.
2. P. K. Larsen, J. H. Neave, J. F. van der Veen P. J. Dobson and B. A. Joyce: Phys. Rev. B 27 (1983) 4996.
3. D. K. Biegelsen, R. D. Bringans, J. E. Northrup and L.-E. Swartz: Phys. Rev. B 41 (1990) 5701.
4. H. H. Farrell, J. P. Harbison and L. D. Peterson: J. Vac. Sci. & Technol. B 5 (1987) 1482.
5. F. J. Lamelas, P. H. Fuoss, P. Imperatori, D. W. Kisker, G. B. Stephenson and S. Brennan: Appl. Phys. Lett. 60 (1992) 2610.
6. A. P. Payne, P. H. Fuoss, D. W. Kisker, G. B. Stephenson and S. Brennan: Phys. Rev. B 49 (1994) 14427.
7. T. Hashizume, Q. K. Xie, J. Zhou, A. Ichimiya and T. Sakurai: Phys. Rev. Lett. 73 (1994) 2208.
8. T. Ohno: Phys. Rev. Lett. 70 (1993) 631.
9. J. E. Northrup and S. Froyen: Phys. Rev. Lett. 71 (1993) 2276.
10. J. E. Northrup and S. Froyen: Phys. Rev. B 50 (1994) 2015.
11. G. Brocks, P. J. Kelly and R. Car: Phys. Rev. Lett. 66 (1991) 1728.
12. Y. W. Mo, J. Kleiner, M. B. Webb and M. G. Lagally: Phys. Rev. Lett. 66 (1991) 1998.
13. E. Kaxiras and J. Erlebacher: Phys. Rev. Lett. 72 (1994) 1714.
14. A. Oshiyama: Phys. Rev. Lett. 74 (1995) 130.
15. J. Nara, T. Sasaki and T. Ohno: Phys. Rev. Lett. 79 (1997) 4421.
16. S. Jeong and A. Oshiyama: Phys. Rev. Lett. 79 (1997) 4425.
17. A. Kley, P. Ruggerone and M. Scheffler: Phys. Rev. Lett. 79 (1997) 5278.
18. K. Shiraishi, T. Ito and T. Ohno: Solid State Electron. 37 (1994) 601.
19. K. Shiraishi, T. Ito and T. Ohno: Nanostructures and Quantum Effects, eds. H. Sakaki and H. Noge (Springer-Verlag, Berlin, 1994) Springer Series in Materials Science, Vol. 31,p. 294.
20. K. Shiraishi and T. Ito: J. Cryst. Growth 150 (1995) 158.
21. K. Shiraishi: Thin Solid Films 272 (1996) 345.
22. T. Ito, K. Shiraishi and T. Ohno: Appl. Surf. Sci. 82/83 (1994) 208.
23. T. Ito: J. Appl. Phys. 77 (1995) 4845.
24. A. Taguchi, K. Shiraishi and T, Ito: submitted to J. Cryst. Growth.
25. J. Wang and A. Rockett: Phys. Rev. B 43 (1991) 12571.
26. D. Srivastava and B. J. Garrison: Phys. Rev. B 46 (1992) 1472.
27. C. Roland and G. H. Gilmer: Phys. Rev. B 46 (1992) 13428.
28. C. Roland and G. H. Gilmer: Phys. Rev. B 47 (1993) 16286.
29. C. Roland and G. H. Gilmer: Phys. Rev. B 46 (1992) 13437.
30. T. Ito and K. Shiraishi: Jpn. J. Appl. Phys. 35 (1996) L949.
31. T. Ho and K. Shiraishi: Jpn. J. Appl. Phys. 35 (1996) L1016.
32. T. Ito and K. Shiraishi: Jpn. J. Appl. Phys. 36 (1997) L1525.
33. T. Ito and K. Shiraishi: Surf. Sci. 386 (1997) 241.
34. T. Ito and K. Shiraishi: Surf. Sci. 357/358 (1996) 486.
35. T. Ito and K. Shiraishi: Appl. Surf. Sci. 121/122 (1997) 171.
36. T. Ito and K. Shiraishi: Jpn. J. Appl. Phys. 37 (1998) L262.
37. K. E. Khor and S. Das Sarma: Phys. Rev. B 38 (1988) 13191.
38. T. Ito, K. E. Khor and S. Das Sarma: Phys. Rev. B 40 (1989) 9715.
39. T. Ito, K. E. Khor and S. Das Sarma: Phys. Rev. B 41 (1990) 3893.
40. K. Shiraishi and T. Ito: Surf. Sci. 357/358 (1996) 451.
41. K. Shiraishi and T. Ito: Phys. Rev. B 57 (1998) 6301.
42. S. B. Zhang and A. Zunger: Phys. Rev. B 53 (1996) 1343.
43. S. B. Zhang and A. Zunger: J. Cryst. Growth 163 (1996) 113.
44. F. F. Abraham and G. M. White: J. Appl. Phys. 41 (1970) 1841.
45. S. Okude, K. Ochiai, M. Kuwabara, M. Hasunuma and T. Kawakubo: Jpn. J. Appl. Phys. 36 (1997) 5481.
46. K. Shiraishi, Y. Y. Suzuki, H. Kageshima and T. Ito: to be pulished in Appl. Surf. Sci.
47. T. Ito and K. Shiraishi: Proc. 2nd Symp. Atomic-scale Surface and Interface Dynamics, Tokyo, 1998, p. 131.
48. A. R. Avery, H. T. Dobbs, D. M. Holmes, B. A. Joyce and D. D. Vvedensky : Phys. Rev. Lett. 79 (1997) 3938.
49. K. Shiraishi and T. Ito: Appl. Surf. Sci. 121/122 (1997) 98.
50. K. Kanisawa, H. Yamaguchi and Y. Horikoshi: Phys. Rev. B 54 (1996) 4428.
51. K. Kanisawa and Y. Horikoshi: Rec. 15th Electronic Materials Symp., Izunagaoka, 1996, p. 207.
52. H. Yamaguchi and Y. Horikoshi: Jpn. J. Appl. Phys. 28 (1989) L1456.
53. Y. Horikoshi, H. Yamaguchi, F. Briones and M. Kawashima: J. Cryst. Growth 105 (1990) 326.
54. H. Yamaguchi and Y. Horikoshi: Jpn. J. Appl. Phys. 30 (1991) 802.
55. M. Sasaki and S. Yoshida: J. Vac. Sci. & Technol. B 10 (1992) 1720.
56. A. P. Payne, P.H. Fuoss, D. W. Kisker, G. B. Stephenson and S. Brennan: Phys. Rev. B 49 (1994) 14427.
57. K. Kanisawa and H. Yamaguchi: Phys. Rev. B 56 (1997) 12080.
58. K. Shiraishi and T. Ito: submitted to Surf. Sci.
59. M. Kasu, N. Kobayashi and H. Yamaguchi: Appl. Phys. Lett. 63 (1993) 678.
60. M. D. Pahley, K. W. Haberern and J. M. Gaines: Appl. Phys. Lett. 58 (1991) 406.
61. T. Ito, K. Shiraishi, H. Kageshima and Y. Y. Suzuki: Jpn. J. Appl. Phys. 37 (1998) L488.
62. K. Shiraishi, T. Ito, Y. Y. Suzuki, H. Kageshima, K. Kanisawa and H. Yamaguchi: submitted to Surf. Sci.
63. K. Shiraishi and T. Ito: submitted to Jpn. J. Appl. Phys.