Theoretical investigations of adsorption behavior on GaAs(001) surfaces

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 8, 1998, Pages 4234-4243

  Ito, Tomonori ^b   Shiraishi, Kenji ^a  

^a NTT Basic Research Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Adsorption behavior; Dimer kink; Electron counting model; Empirical interatomic potential; Ga adatoms; GaAs(001) surfaces; MBE growth; Migration potential; Monte Carlo simulation; Step

Indexed keywords

MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN;

ADATOMS; MIGRATION POTENTIALS;

ADSORPTION;

EID: 0032131137     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4234     Document Type: Article

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