Initial Process of Si Homoepitaxial Growth on Si(001)

Physical Review Letters

Volumn 76, Issue 16, 1996, Pages 2949-2952

  Yamasaki, Takahiro ^a   Uda, Tsuyoshi ^a   Terakura, Kiyoyuki ^b  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001374666     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.76.2949     Document Type: Article

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