Nanoscale effects of arsenic kinetics on GaAs(001)-(2×4) homoepitaxy

Surface Science

Volumn 423, Issue 2, 1999, Pages

  Bell, G R ^a   Itoh, M ^a   Jones, T S ^a   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SURFACE CHEMISTRY; SURFACE PHENOMENA; SURFACE STRUCTURE;

HOMOEPITAXY; SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0344806281     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00089-8     Document Type: Article

References (9)

1. Eberl K., Petroff P.M., Demeester P. Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates. 1995;Kluwer, Dordrecht.
2. Foxon C.T., Joyce B.A. Surf. Sci. 50:1975;435.
3. Foxon C.T., Joyce B.A. Surf. Sci. 64:1977;298.
4. Shen X., Kishimoto D., Nishinaga T. Jpn J. Appl. Phys. 33:1994;11.
5. Neave J.H., Blood P., Joyce B.A. Appl. Phys. Lett. 36:1980;311.
6. Itoh M., Bell G.R., Avery A.R., Jones T.S., Joyce B.A., Vvedensky D.D. Phys. Rev. Lett. 81:1998;633.
7. Holmes D.M., Sudijono J.L., McConville C.F., Jones T.S., Joyce B.A. Surf. Sci. 370:1997;L173.
8. Tok E.S., Neave J.H., Zhang J., Joyce B.A., Jones T.S. Surf. Sci. 374:1997;397.
9. Avery A.R., Dobbs H.T., Holmes D.M., Joyce B.A., Vvedensky D.D. Phys. Rev. Lett. 79:1997;3938.