Selective MOVPE of GaN and AlxGa1 - xN with smooth vertical facets

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 72-77

  Akasaka, Tetsuya ^a   Kobayashi, Yasuyuki ^a   Ando, Seigo ^a   Kobayashi, Naoki ^a   Kumagai, Masami ^a  

^a NTT Corporation and CREST of Japan Science and Technology   (Japan)

Author keywords

AlGaN; GaN; Hexagonal microprism; Selective MOVPE; Stimulated emission; Vertical facets

Indexed keywords

ADSORPTION; DESORPTION; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; OPTICAL PUMPING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH;

HEXAGONAL MICROPRISM; VERTICAL FACETS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032094526     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00172-9     Document Type: Article

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