Selective-area regrowth of GaN field emission tips

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 243-245

  Underwood, R D ^a   Kapolnek, D ^a   Keller, B P ^a   Keller, S ^a   Denbaars, S P ^a   Mishra, K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; MASKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; THIN FILMS;

HEXAGONAL PYRAMID STRUCTURES;

FIELD EMISSION CATHODES;

EID: 0031077717     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00209-2     Document Type: Article

References (7)

1. R. H. Fowler and L. W. Nordheim, Proc. Roy. Soc. Lond. A119, 173 (1928).
2. I. Brodie and C. A. Spindt, Adv. Electron Phys. 83, 13 (1992).
3. R. N. Thomas, R. A. Wickstrom, D. K. Schroder and H. C. Nathanson, Solid-St. Electron. 17, 155 (1974).
4. C. A. Spindt, C. E. Holland, A. Rosengreen and I. Brodie, IEEE Trans. Electron Devices 38, 2355 (1991).
5. K. Okano, K. Hoshina, M. Iida, S. Koizumi and T. Inuzuka, Appl. Phys. Lett. 64, 16 (1994).
6. S. Kitamura, K. Hiramatsu and N. Sawaki, Jpn. J. Appl. Phys. 34, L1184 (1995).
7. Y. Kato, S. Kitamura, K. Hiramatsu and N. Sawaki, J. Cryst. Growth 144, 133 (1994).