Selective area growth of GaN using tungsten mask by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 7 SUPPL. B, 1998, Pages

  Kawaguchi, Yasutoshi ^a   Nambu, Shingo ^a   Sone, Hiroki ^a   Shibata, Takumi ^a   Matsushima, Hidetada ^a   Yamaguchi, Masahito ^a   Miyake, Hideto ^b   Hiramatsu, Kazumasa ^b   Sawaki, Nobuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b MIE UNIVERSITY   (Japan)

Author keywords

GaN; Metalorganic vapor phase epitaxy (MOVPE); Selective area growth (SAG); Stripe pattern; Tungsten (W) mask

Indexed keywords

EPITAXIAL GROWTH; GALLIUM COMPOUNDS; MASKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; TUNGSTEN;

SELECTIVE AREA GROWTH;

LIGHT EMITTING DIODES;

EID: 0032119725     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l845     Document Type: Article

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