The formation of crystalline defects and crystal growth mechanism in InxGa1 - xN/GaN heterostructure grown by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 24-28

  Kawaguchi, Yasutoshi ^a   Shimizu, Masaya ^a   Yamaguchi, Masahito ^a   Hiramatsu, Kazumasa ^b   Sawaki, Nobuhiko ^a   Taki, Wataru ^c   Tsuda, Hidetaka ^c   Kuwano, Noriyuki ^c   Oki, Kensuke ^c   Zheleva, Tsvetanka ^d   Davis, Robert F ^d  

^a NAGOYA UNIVERSITY   (Japan)

^b MIE UNIVERSITY   (Japan)

^c KYUSHU UNIVERSITY   (Japan)

^d North Carolina State University   (United States)

Author keywords

Composition pulling effect; Compositional inhomogeneity; InxGa1 xN GaN; Lattice mismatch; MOVPE; TEM observation

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL LATTICES; CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

COMPOSITIONAL INHOMOGENEITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032089896     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00149-3     Document Type: Article

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