An efficient and accurate compact model for thin-oxide-mosfet intrinsic capacitance considering the finite charge layer thickness

IEEE Transactions on Electron Devices

Volumn 46, Issue 5, 1999, Pages 1070-1072

  Liu, Weidong ^a   Jin, Xiaodong ^a   King, Yachin ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Capacitance; Charge layer thickness; Mosfet model; Quantum effect

Indexed keywords

CAPACITANCE; GATES (TRANSISTOR); QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS;

CHARGE LAYER THICKNESS;

MOSFET DEVICES;

EID: 0032625531     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.760418     Document Type: Article

References (11)

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