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Volumn 37, Issue 3, 1994, Pages 411-414
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A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CHARGE CARRIERS;
ELECTRON ENERGY LEVELS;
ENERGY GAP;
LEAKAGE CURRENTS;
MOSFET DEVICES;
QUANTUM THEORY;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
CARRIER MOTION;
CLASSICAL DEVICE STIMULATORS;
CONDUCTION BAND;
INTRINSIC CARRIER CONCENTRATION;
INVERSION CHANNEL;
QUANTISATION EFFECTS;
SILICON BANDGAP;
TRANSISTOR PARAMETERS;
SEMICONDUCTOR DEVICE MODELS;
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EID: 0028396643
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/0038-1101(94)90005-1 Document Type: Article |
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Times cited : (240)
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References (12)
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