Determination of ultra-thin gate oxide thicknesses for CMOS structures using quantum effects

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 613-616

  Rios, Rafael ^a   Arora, Narain D ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; COMPUTATIONAL METHODS; ERROR CORRECTION; GATES (TRANSISTOR); OXIDES; PERMITTIVITY MEASUREMENT; QUANTUM THEORY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; STATISTICAL MECHANICS; VOLTAGE MEASUREMENT;

POISSON EQUATION; QUANTUM MECHANICAL EFFECTS;

CMOS INTEGRATED CIRCUITS;

EID: 0028756974     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)